It. You are given a device with the contact between a semiconductor and a metal. The work function ofthe metal is 5.3 eV' As for the semiconductor, the electron affinity is 4.l eV. the Fermi level is 0.2 eV above the valence band edge, and the bandgap is [.1 eV. (A) Draw the energy band diagrams of the device at at band state and under equilibrium. (B) Determine the potential barrier height and equilibrium contact potential of the device. (C) Determine whether the device forms a rectifying contact or an ohmic contact. and justify your