A NPN silicon transistor is operating in a common emitter configuration in the active region. IB...

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A NPN silicon transistor is operating in a common emitter configuration in the active region. IB is measured as 45 µA flowing into the base, le is measured as 2.2 mA and VCE is measured as 6.5 volts. Determine the following (Po is the power dissipated by the transistor): (10pts) (suggestion draw transistor symbol and label with known information) a) lc = b) B = c) α = d) VCB = e) PD= A NPN silicon transistor is operating in a common emitter configuration in the active region. IB is measured as 45 µA flowing into the base, le is measured as 2.2 mA and VCE is measured as 6.5 volts. Determine the following (Po is the power dissipated by the transistor): (10pts) (suggestion draw transistor symbol and label with known information) a) lc = b) B = c) α = d) VCB = e) PD=

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Lets go through each part step by step a First we can use the relationship between the collector cur... View the full answer