Question: A PN junction is formed in semiconductor X between region - 1 with Na = 1 0 1 7 cm - 3 , and region

A PN junction is formed in semiconductor X between region-1 with Na =1017cm-3, and region-2 with Na =1017cm-3 and Nd =121016 cm-3. Semiconductor X has bandgap of 2.0 ev, intrinsic carrier concentration of ni,X =2.5108 cm-3, and relative permittivity of r,X =5.0.

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