A PN$+^++$ silicon diode has ND$=1018$cm$3$N$\_$D $=10^\{18\}\backslash ,\backslash$text$\{$cm$\}^\{-3\}$ND$=1018$cm$3$ and NA$=1016$cm$3$N$\_$A $=10^\{16\}\backslash ,\backslash$text$\{$cm$\}^\{-3\}$NA$=1016$cm$3,$ p$=$n$=1$s$\backslash$tau$\_$p $=\backslash$tau$\_$n $=1\backslash ,\backslash$mu$\backslash$text$\{$s$\}$p$=$n$=1$s$,$ and A$=1\mathrm{.}2104$cm$2$A $=1\mathrm{.}2\backslash$times $10^\{-4\}\backslash ,\backslash$text$\{$cm$\}^2$A$=1\mathrm{.}2104$cm$2.$ Determine:

a$)$ The reverse saturation current.

b$)$ The current when the applied voltage in the forward direction is $0\mathrm{.}7$V$0\mathrm{.}7\backslash ,\backslash$text$\{$V$\}0\mathrm{.}7$V$.$

c$)$ The current when the applied voltage in the reverse direction is $0\mathrm{.}02$V$0\mathrm{.}02\backslash ,\backslash$text$\{$V$\}0\mathrm{.}02$V$.$