Question: A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that E c EF = 0.21 eV in the

A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that E_c − EF = 0.21 eV in the n region and EF − E_v = 0.18 eV in the p region.

(a) Draw the energy band diagram of the PN junction.

(b) Determine the impurity doping concentrations in each region.

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