A silicon n-channel MOSFET cell has a threshold voltage of Vm= 2V, W. = 10m, L,...

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A silicon n-channel MOSFET cell has a threshold voltage of Vm= 2V, W. = 10μm, L, 1um, and an oxide thickness of tox-50nm. The device is biased with Vp-10V and Vas = 15V. i. Assuming a quadratic model and a surface carrier mobility of 300 cm³/V-s, calculate the drain current, cell dissipation, forward transconductance, and output conductance. ii. Assuming carrier velocity saturation (5x10 cm/s), calculate the drain current, cell dissipation, forward transconductance, and output conductance. A silicon n-channel MOSFET cell has a threshold voltage of Vm= 2V, W. = 10μm, L, 1um, and an oxide thickness of tox-50nm. The device is biased with Vp-10V and Vas = 15V. i. Assuming a quadratic model and a surface carrier mobility of 300 cm³/V-s, calculate the drain current, cell dissipation, forward transconductance, and output conductance. ii. Assuming carrier velocity saturation (5x10 cm/s), calculate the drain current, cell dissipation, forward transconductance, and output conductance.

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To calculate the parameters of the MOSFET cell we can use the quadratic model for the saturation region Lets go through the calculations step by step i Assuming a quadratic model and a surface carrier ... View the full answer