A silicon p-n junction diode is doped NA = 2E+15 cm-3 and ND = 2E+17 cm-3....

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A silicon p-n junction diode is doped NA = 2E+15 cm-3 and ND = 2E+17 cm-3. At the temperatoure of operation ni = 1 10^10 cm-3. The cross-sectional area of the diode is 10-4 cm2. The diffusion constants and recombination times are: Dn = 20 cm2/s, Dp = 10 cm2/s, tn = 7 x 10-7 s, and tp = 5 x 10-7 s. What is the reverse saturation current of this diode? A silicon p-n junction diode is doped NA = 2E+15 cm-3 and ND = 2E+17 cm-3. At the temperatoure of operation ni = 1 10^10 cm-3. The cross-sectional area of the diode is 10-4 cm2. The diffusion constants and recombination times are: Dn = 20 cm2/s, Dp = 10 cm2/s, tn = 7 x 10-7 s, and tp = 5 x 10-7 s. What is the reverse saturation current of this diode?

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