a). Calculate the ideal reverse saturation current (lo) in a silicon p-n junction diode. The parameters of the diode are: N = 5 x 1016 cm Nd = 5 x 1016 cm n = 1.5 x 10 10 cm D = 50 cm/sec Dp = 15 cm/sec T = tp = 107 secs 2(b) Area of cross-section (A) = 104 cm. Calculate forward bias current at forward bias voltage of 0.5 V. 2(c). For the p-n junction in problem a, calculate the junction capacitance (C;) per unit area (in F/cm) at the reverse bias of -4V