A silicon sample is doped with 10^15 boron atoms/cm^3. What is the electron concentration at 300K? What is the hole concentration? What is the resistivity?

We found the electron concentration to be 2.25 x 10^4 cm-3, the hole concentration to be 10^15 cm-3, and the resistivity to be 2.45 ohm*cm.

If the silicon sample in the problem is 2 cm long and has a cross-section of 0.1 cm^2.

a. What is the current in the sample if 10 V is applied across the silicon?

b. What is the drift velocity of holes under these conditions?

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