A silicon semiconductor resistor in the shape of a rectangular bar with a cross sectional area of
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Question:
A silicon semiconductor resistor in the shape of a rectangular bar with a cross sectional area of A = 4 × 10-4 cm2. The bar has a length of 0.075 cm and doped with a concentration of ND = 5 × 1014cm-3 donor atoms at T = 300 K. If the bias voltage is 4 V across the length of the bar and the values of mn and mpare 1150 cm2/V-s and 520 cm2/V-s respectively, then using ni = 1.5 × 1010 /cm3 for silicon at T = 300 K, compute
(i) drift field E in V/cm
(ii) electron and hole drift current density
(iii) drift current flowing through the slab
(iv) resistivity of the slab.
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