Question: ( a ) The impurity doping concentrations in a silicon pn junction at T = 3 0 0 K are Na = 2 x 1

(a) The impurity doping concentrations in a silicon pn junction at T =300 K are
Na =2 x 1015 cm3 and Nd =4 x 1016 cm3. The cross-sectional area of the pn junction is
5 x 104 cm2. Determine the junction capacitance at (i) VR =0 and (ii) VR =5 V.(b) Repeat part
(a) for a GaAs pn junction

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!

Q:

7 . 2 4 The impurity doping concentrations in a silicon pn junction at T = 3 0 0 K are Na = 2 x 1 0 ^ 1 5 and Nd = 4 x 1 0 ^ 1 6 . The cross sectional area of the pn junction is 5 x 1 0 ^ - 4 ....

Q:

Problem 7 . 2 4 ( a ) The impurity doping concentrations in a silicon pn junction at T = 3 0 0 K are Na = 2 x 1 0 1 5 cm 3 and Nd = 4 x 1 0 1 6 cm 3 . The cross - sectional area of the pn junction is...

Q:

.24 (a) The impurity doping concentrations in a silicon pn junction at T=300K are Na=21015cm3 and Nd=41016cm3. The cross-sectional area of the pn junc tion is 5104cm2. Determine the junction...

Q:

Problem 8 . 4 ( 1 0 points ) ( a ) The doping concentrations in a silicon pn junction are Nd = 5 x 1 0 1 5 cm 3 and Na = 5 x 1 0 1 6 cm 3 . The minority carrier concentration at either space charge...

Q:

8 . 4 ( a ) The doping concentrations in a silicon pn junction are Nd 5 1 0 1 5 cm 3 and Na 5 1 0 1 6 cm 3 . The minority carrier concentration at either space charge edge is to be no larger than 1 0...

Q:

The doping concentrations in a silicon pn junction are \(N_{d}=5 \times 10^{15} \mathrm{~cm}^{-3}\) and \(N_{a}=10^{17} \mathrm{~cm}^{-3}\). The zero-bias junction capacitance is \(C_{j o}=0.60...

Q:

EC310 - Fall 2021 HW(4):PN Forward biasing Due to 1/Jan/2022 Q1) Consider a P N junction diode with No = 10 cm in the N region, Tp is given to be 1 usec. a) Determine the diffusion length L on the...

Q:

1. Use this information to answer Question 1.2i Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a 1/C2V graph, the...

Q:

Problem 7 . 2 1 ( 1 0 points ) Consider two p + n silicon junctions at T = 3 0 0 K reverse biased at VR = 5 V . The impurity doping concentrations in junction A are Na = 1 0 1 8 cm 3 and Nd = 1 0 1 5...

Q:

Consider two pn silicon junctions at T 3 0 0 K reverse biased at VR 5 V . The impurity doping concentrations in junction A are N a 1 0 1 8 cm 3 and Nd 1 0 1 5 cm 3 , and those in junction B are Na 1...

Q:

What is the nature of the two categories of standards in the IIA International Standards for the Professional Practice of Auditing?

Q:

White Industries is considering a new method of assembling its buggy golf car. The present method requires 42.3 minutes, on the average, to assemble a car, using the new method, was 40.6 minutes, and...

Q:

Refer to the Revenue statement below. What is the Operating Margin ( also known as Profit Margin ) ? Dr . Smith & Brown Statement of Revenue Revenue Net patient revenue 1 8 0 , 0 0 0 Other revenue 0...

Q:

The optimal capital structure has been achieved when the: weight of equity is equal to the weight of deb t cost of equity is maximized given a pretax cost of debt debt-equity ratio is equal to 1 p...