Question: 7 . 2 4 The impurity doping concentrations in a silicon pn junction at T = 3 0 0 K are Na = 2 x

7.24 The impurity doping concentrations in a silicon pn junction at T =300K are Na =2 x10^15 and Nd =4 x 10^16. The cross sectional area of the pn junction is 5 x 10^-4. Determine the junction capacitance at i) Vr =0 and ii) Vr =5V. b) Repeat part a for a GaAs pn junction.

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