AB'C + AB

C D Q a) Convert the circuit in experiment 1 (fig. 1.2.5.1) so that it now onlyconsists of NAND gates and completes fig. 1.2.5.3 using the following rules: DReplace each ORwith. NOR gate, De 2) Replace each AND gate with invert-NAND gate 3Notice the bubble in a single line. A single bubble means a complement inversion). Two bubbles on the same line mean double complementation which cancels each other. If there was a single bubble on a line then we have to insert an inverter in that line. ABCD Fig. 1.2.5.3 Circuit in NOR technology b)Do the conversion in fig. 1.2.5.3 by calculation (i.e. Use De Morgan's and other Boolean algebra theorems such that the function is implemented with NOR only) c) By looking at the two answers obtained in parts (a) and (b): Can NOR gates be saved with the calculating method? . Compare exp.2.(using NAND) and exp.3.(using NOR). Which method requires the most effort (more. gates)