Consider an n-channel silicon JFET with the following parameter: Na 3x108/cm, Na = 8x106/cm, and a...

  

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Consider an n-channel silicon JFET with the following parameter: Na 3x10¹8/cm³, Na = 8x10¹6/cm³, and a = 0.5 µm. (a is width of channel with neglecting the depletion region, assume T 300°K and the dielectric constant of Si, Esi, is 11.7-Eo) = (a) Calculate the internal pinch-off voltage. (b) Determine the gate voltage required such that the undepleted channel is 0.20 μm Consider an n-channel silicon JFET with the following parameter: Na 3x10¹8/cm³, Na = 8x10¹6/cm³, and a = 0.5 µm. (a is width of channel with neglecting the depletion region, assume T 300°K and the dielectric constant of Si, Esi, is 11.7-Eo) = (a) Calculate the internal pinch-off voltage. (b) Determine the gate voltage required such that the undepleted channel is 0.20 μm

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a Calculate the internal pinchoff voltage The internal pinchoff voltage Vpi of an nchannel silicon J... View the full answer