An abrupt PN junction in a semiconductor with breakdown field of $500$ kV$/$cm has breakdown voltage of $30$V$.$ What is the breakdown voltage of a P$-$I$-$N junction formed in the same semiconducto, with the same doping levels in the N and P regions, and intrinsic region width of $2$ microns?

a$.$

$130$V

b$.$

$230$V

c$.$

$80$V

d$.$

$35$V

e$.$

$25$ V

f$.$

$30$V

g$.$

$1030$ V

h$.$

$20$ V

i$.$

$10$ V

j$.$

$530$ V