9. Consider a Si diode biased in region B in the figure above. For automotive applications, integrated circuits must operate in the temperature range of -40 C to +125 C. Assume that the diffusion coefficients, lifetimes, and bandgap are unaffected by the temperature change. If the applied voltage is fixed at V = 0.7 V, what is the ratio of the max current to the min current over this temperature range? (Convert to Kelvin before calculating numbers) 10. For a pn junction diode, describe two mechanisms of reverse bias breakdown. 11. Below is the band diagram of an ideal Si diode under forward bias of 0.3 V. It consists of an abrupt pn junction, N = ND, and T = 300 K. Ec.p Ei,p Ev.p 10.5 eV Ec,n Ein Ev,n (a) Determine NA and ND (1/cm). (b) Determine Et,p - Fp on the p-side and Fn - Ein on the n-side. (c) On the band diagram, draw and label the quasi-Fermi levels throughout the device under the assumptions leading to the ideal diode equation. Indicate the depletion region with dashed lines.