Question: An abrupt Si p - n junction ( A = 1 0 4 cm 2 , assume ideal diode characteristics, ni = 1 . 5

An abrupt Si p-n junction (A =104 cm2, assume ideal diode characteristics, ni =1.5 x 1010 cm-3) has the following properties at 300 K: p side n side NA =1017 cm-3 ND =1015 cm-3 n =0.1 s p =10 s p =200 cm2/V s n =1300 cm2/V s n =700 cm2/V s p =450 cm2/V s (10 points) The junction is forward biased by 0.5 V. What is the forward current? (5 points) What is the current at a reverse bias of 0.5 V?

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