Question: An abrupt Si p - n junction ( A = 1 0 4 cm 2 , assume ideal diode characteristics, ni = 1 . 5
An abrupt Si pn junction A cm assume ideal diode characteristics, ni x cm has the following properties at K: p side n side NA cm ND cm n s p s p cmV s n cmV s n cmV s p cmV s points The junction is forward biased by V What is the forward current? points What is the current at a reverse bias of V
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