An n$-$type silicon semiconductor with a doping concentration of ND$=11016$cm$3$ forms a Schottky contact with a metal. If the built$-$in potential Vbiis $0\mathrm{.}7$ V$,$ what is the depletion width W in the semiconductor? $($Assume the permittivity of silicon, $=11\mathrm{.}78\mathrm{.}851014$F$/$cm$).$

Group of answer choices

$0\mathrm{.}11$ m

$0\mathrm{.}24$ m

$0\mathrm{.}3$ m

$0\mathrm{.}38$ m