(a) What inequality must hold for a metal/semiconductor junction to behave as a rectifying junction. (b) Calculate the ideal Schottky barrier, Bo- (c) Draw the ideal energy band diagram of a metal-n type semiconductor junction. (a) Assuming the effective Richardson constant, A*= 114 A/K.cm, and using the standard saturation current density, (s) equation for metal-semiconductor contact (watch the vidoe), calculate the real Schottky barrier height, Bn- (b) Draw the energy band diagram showing the real barrier height (PB) and applied forward bias voltage. (c) Noting that the junction capacitance per unit area as a function of reverse bias has the following relationship, dxn C' = eNa = dVR ee, Nd [2(V bi+VR) determine the following: built in potential barrier, Vbi, doping concentration of the silicon, Nd, the potential, and the real Schottky barrier height, Bn. (3) (b) Write a conclusion with a focus on the impact of the lowering of the barrier. (3) (6) (8) (10) (a) Discuss the physics explaining the difference between the ideal barrier calculation versus the two real values you have determined. Use drawings to help explain. (12) (10)