Answer appropriately

12. [-/9 Points] DETAILS MY NOTES ASK YOUR TEACHER PRACTICE ANOTHER This question has several parts that must be completed sequentially. If you skip a part of the question, you will not receive any points for the skipped part, and you will not be able to come back to the skipped part. Tutorial Exercise Evaluate the given expression. Take 1 -1 0 x 1w A = 0 9 -1 and C = zr 7 9AT - CT Step 1 Recall that if A is an m x n matrix, then its transpose is the n x m matrix obtained by writing its columns as rows, so the ith column of the original matrix becomes the ith row of the transpose. We denote the transpose of the matrix A by A . The expression 9A' - C' involves the transpose of the matrix A as well as the transpose of the matrix C, so our first step will be to determine each of these matrices. We are given matrix A. A = 1 0 9 Since matrix A is a 2 x 3 matrix , then its transpose A' will be a X matrix.2. When excess carriers are created non-uniformly in a semiconductor, the electron and hole concentrations vary with position in the sample by diffusion due to a carrier gradient and drift in an electric field which represent a net charge transport process in semiconductor. (a) A Silicon sample with carrier concentration, n. = 10" /cm and the optical generation rate, g. =10" EHP/cm' is created optically every microseconds. Given the r. = r, = 2/sec. i. Determine the steady state excess electron (or hole) concentration. (2 marks) ii. Find the minority carrier concentration in equilibrium and steady state condition. (3 marks) ili. A similar setup for silicon above, determine the electron quasi- Fermi level position of Fn - E. (10 marks) (b) A 0.46 mm-thick sample of GaAs is illuminated with monochromatic light of hv =2el . The absorption coefficient, a =5x10* cm . The power incident on the sample is 10mW . Determine total energy (J/s) absorbed by sample. (5 marks) 3. A sample of silicon has an intrinsic region but with doping configuration N. = 10" acceptor / cmon the P-side and N. =10" donors/ cm" on the N- side. Assuming there is complete ionization and ignoring minority carriers (n>>p or p>>n) at 300K. Assume the doping material have e, = 11.8. (a) Find the built-in potential, V. . (8 marks) (b) Calculate depletion region width, W . (5 marks) (c) Find the maximum magnitude of the electric field, 5. for this junction at equilibrium (300K). (7 marks)0) Suppose we estimate the above function using a sample of data and the ordinary least squares method (OLS). Write down the sample regression function. (1) What is the relationship between 50 and ,80, and the relationship between Bl and 131? e) What does it mean for Ba and 81 to be unbiased? Under which assumptions are 30 and 5'1 unbiased