Assume a $"0"$ in a DRAM cell is $0$V$0$V$,$ and a $"1"$ is VDD $($approximation$).$ Bitline is precharged to VDD$/2$ to read the cell. As the Wordline is turned ON$,$ Bitline read voltage changes depending on the value of the cell content $(0$ or $1).$ CBL$=100$CC$,$CBL$=100$CC$,$ VDD$=3$V$,$VDD$=3$V$,$ Vth$=0\mathrm{.}5$V$.$Vth$=0\mathrm{.}5$V$.$