At room temperature for a p$-$type silicon substrate MOS capacitor with NA $=1018$ cm$-3$ and

an oxide thickness of $2$nm with Ko $=3\mathrm{.}9$:

a$)$ Compute fermi potential $$F

b$)$ Calculate the maximum space charge width

c$)$ Compute the depletion layer thickness, W$,$ when $$s $=2$F

d$)$ Compute the electric field at the surface, Es$,$ when $$s $=2$F

e$)$ Find oxide capacitance, Cox.

f$)$ Compute the threshold voltage, VT$,$ when $$s $=2$F

Note that $=1$

$2$