2. MOS Capacitor on n-type substrate Consider a MOS capacitor with a p polysilicon gate and...

 

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2. MOS Capacitor on n-type substrate Consider a MOS capacitor with a p polysilicon gate and n-type silicon substrate. Assume Na = 10¹6 cm³ for the substrate and let Ev - Ep = 0.2 eV in the p* polysilicon. The oxide has a thickness of tox= 30 nm. Assume the interface charge is 100 e/cm². Also assume X (polysilicon) = x (single-crystal silicon). (a) Calculate the metal-semiconductor work function difference. (b) Calculate the flat band voltage. (c) Calculate Om. O at the threshold voltage, the maximum depletion width, Cox. and the threshold voltage. (d) Calculate C'FB. C'min and C (inv) at f = 1 Hz. (e) Calculate C'FB. C'min and C' (inv) at f= 1 MHz. (f) Sketch the C-V curves for both 1 Hz and 1MHz. 2. MOS Capacitor on n-type substrate Consider a MOS capacitor with a p polysilicon gate and n-type silicon substrate. Assume Na = 10¹6 cm³ for the substrate and let Ev - Ep = 0.2 eV in the p* polysilicon. The oxide has a thickness of tox= 30 nm. Assume the interface charge is 100 e/cm². Also assume X (polysilicon) = x (single-crystal silicon). (a) Calculate the metal-semiconductor work function difference. (b) Calculate the flat band voltage. (c) Calculate Om. O at the threshold voltage, the maximum depletion width, Cox. and the threshold voltage. (d) Calculate C'FB. C'min and C (inv) at f = 1 Hz. (e) Calculate C'FB. C'min and C' (inv) at f= 1 MHz. (f) Sketch the C-V curves for both 1 Hz and 1MHz.

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