Consider a CMOS process for which Lmin = 0.25 m, tox = 6 nm, n 460...

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Consider a CMOS process for which Lmin = 0.25 µm, tox = 6 nm, µn 460 cm2/V . s, and V; %3| 0.5 V. (a) Find Cox and k', (b) For an NMOS transistor with W/L = 15 um/0.25 um, calculate the values of Voy , Ves, and Vpsmin needed to operate the transistor in the saturation region with a de current I, = 0.8 mA. (c) For the device in (b), find the value of Vov and Ves required to cause the device to operate as a 500 – N resistor for very small vps. Consider a CMOS process for which Lmin = 0.25 µm, tox = 6 nm, µn 460 cm2/V . s, and V; %3| 0.5 V. (a) Find Cox and k', (b) For an NMOS transistor with W/L = 15 um/0.25 um, calculate the values of Voy , Ves, and Vpsmin needed to operate the transistor in the saturation region with a de current I, = 0.8 mA. (c) For the device in (b), find the value of Vov and Ves required to cause the device to operate as a 500 – N resistor for very small vps.