Consider a GaAs/AlGaAs heterostructure containing a two-dimensional electron gas (2DEG) 100 nm below the top surface. The
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Consider a GaAs/AlGaAs heterostructure containing a two-dimensional electron gas (2DEG) 100 nm below the top surface. The 2DEG has an electron density of 3 x 1011 cm-2. The AlGaAs have a dielectric constant equal to 12. A large metal gate electrode directly on top of the heterostructure is used to tune the electron density in the 2DEG below.
If the 2DEG potential is held at zero, what voltage should be applied to the top gate to reduce the electron density in the 2DEG to zero?
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