Consider a long Si solar cell operating at 300K with the following parameters. Area, A= 1.1×10⁴ µm²; Acceptor doping, N_a = 1.5×10¹⁶ cm^-3; Donor doping, N_d = 4.5×10¹⁷ cm^-3; Electron diffusion coefficient, D_n = 25 cm²/s; Hole diffusion coefficient, D_p = 10 cm²/s; Electron recombination time, τ_n = 3×10^-7 s; Hole recombination time, τ_p = 1×10^-7 s; Electron hole pair generation rate by light, G_L = 10²² cm^-2 s^-1; calculate the photo current. The solar cell is reverse biased with a voltage of 2V.

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Soln A 110 um Na 15x10 Cn3 Nj45Y10 cm3 Dn 25 m Pp 10cms 10s Tp 10 5 3D G 10e VR ... View the full answer