Question: Consider a pn junction with N _ { A } = 1 0 ^ 1 8 * c * m ^ - 3 and N

Consider a pn junction with N_{A}=10^18* c * m ^-3 and N_{D}=10^16* c * m ^-3\ under a forward bias of 0.6 V.
v_{A}>0.6
(a) What are the minority carrier concentrations at the edges of the depletion region?
morority="
M*l_{0}
e ^(q*V_{A}/ k * T)=10^10 since: (kt)/q * ln(10)=0.06V
np(xp) VA/kT10210101012 N
Pn(x)
n ND QVA/KT Pno
10410101014
Total minority carriers
p(- x * p)
PIN
(b) What are the excess minority carrier concentrations at the edges

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