Consider a silicon pn junction diode with an applied reverse$-$biased voltage of $=5.$ The doping concentrations are $==410163$ and the cross$-$sectional area is $=1042.$ Assume minority carrier lifetimes of $0=0=0=107.$ Calculate the $($a$)$ ideal reverse$-$saturation current, $($b$)$ reverse$-$biased generation current, and $($c$)$ the ratio of the generation current to ideal saturation current. $($caution: Is $=)$