Consider a silicon pn junction with the doping profile shown in Figure P7.29.

T = 300 K

(a) Calculated the applied reverse-biased voltage required so that the space charge region extends entirely through the p region.

(b) Determine the space charge width into the n+ region with the reverse-biased voltage calculated in part (a).

(c) Calculate the peak electric field for this applied voltage

Transcribed Image Text:

1016 1014 P +(Ng – Ng) (cm^3) 0 2016 ΔΕ 50 x (μπι) 1016 1014 P +(Ng – Ng) (cm^3) 0 2016 ΔΕ 50 x (μπι)

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An junction with N 10 14 cm ... View the full answer