Consider a silicon pn junction with a cross section area of $1$x$10-5$

cm

$2$

$,$ a reverse bias

Assume the critical field to be equal to $3$x$105$ V$/$cm$.$

a$)(5$ points$)$ Compare the hole density at xn to the electron density at $-$xp

b$)(5$ points$)$ Compare the hole current at xn to the electron current at $-$xp

c$)(5$ points$)$ Determine the breakdown voltage.

d$)(10$ points$)$ Calculate the total number of excess electrons in the p bulk region.