Consider a silicon wafer that has a uniform doping concentration of $1\mathrm{.}40$ x $1016$ cm$-3$ donor atoms. A pn junction is formed in an area of the wafer by the addition of $2\mathrm{.}25$ x $1016$ cm$-*$ acceptors. Assuming room temperature $(300$ K$)$:

$(3)$

$$

$(3)$

$($i$)$

Calculate the carrier concentrations in the bulk region on the

$=2\mathrm{.}25$x$1022$

p$-$type side of the junction.

Using the full depletion approximation, calculate the total

$$

depletion region width of the pn junction with zero applied bias.