Consider an n$-$type silicon Schottky diode with a built$-$in potential of $0\mathrm{.}6$ Volt and doping density of $\backslash (1$ E $16\backslash )\backslash (\backslash$mathrm$\{$cm$\}^\{\backslash$wedge$\}-3\backslash ).$ What is its breakdown voltage magnitude in V if the relative dielectric constant of the semiconductor is $11\mathrm{.}9?$

Consider an n$-$type $4$H$-$SiC Schottky diode with a built$-$in potential of $1$ Volt and doping density of $\backslash (1\backslash$mathrm$\{$E$\}16\backslash$mathrm$\{$~cm$\}\backslash$wedge$-3\backslash ).$ What is its breakdown voltage magnitude in V if the relative dielectric constant of the semiconductor is $9\mathrm{.}7?$

Consider an n$-$type GaN Schottky diode with a built$-$in potential of $0\mathrm{.}8$ Volt and doping density of $3$ E $16$ cm $^-3.$ What is its depletion layer width in um if the relative dielectric constant of the semiconductor is $8\mathrm{.}9?$