Question: Consider an Si substrate doped with As with a doping concentration of 5 x 1017 cm-3 and the following parameters: Substrate dielectric constant: s =

Consider an Si substrate doped with As with a doping concentration of 5 x 1017 cm-3 and the following parameters: Substrate dielectric constant: s = 11.7 o Channel length: L = 0.6 m Channel width: Z = 1 m Oxide (SiO2) thickness: 10 nm Oxide dielectric constant: ox = 3.9o Carrier mobilities: n = 850cm2/V - s, p = 550cm2/V - s Temperature: 300K Intrinsic carrier concentration: ni = 1.5 x 1010 cm-3 Flat band voltage VFB = 1.32V The source is grounded i.e., VS = 0V (A) Is this a p-type or n- type substrate? Will the channel be p-type or n-type? What will be the type of charge carrier in the channel (electron or hole)? (B) What is the oxide capacitance? (C) What is the threshold voltage of the device? Is it an enhancement mode device or a depletion mode device

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