Question: . Consider silicon at T = 3 0 0 K that is doped with donor impurity atoms to a concentration of Nd = 5 1

. Consider silicon at T =300 K that is doped with donor impurity atoms to a concentration of Nd =51015 cm-3. The excess carrier lifetime is 210-7 s.(a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that n =p =1014 cm-3. What is the recombination rate of holes for this condition?

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