Constants: Boltzmann constant k = 1.3810-23 J/K OR 8.61105 eV/K Electron charge e = -1.610-9 C...

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Constants: Boltzmann constant k = 1.38×10-23 J/K OR 8.61×10¹5 eV/K Electron charge e = -1.6×10-¹9 C Free electron mass m = 9.1×10-³¹ kg Plank's constant h = 6.6x10-34 J.s Reduced Planck's constant: h = h/(27) = 1.0545x10-34 J.s Proton mass M = 1.67x10-27 kg Speed of light c = 3×108 m/s 1J = 6.241509x10¹8 ev Question 1 [30 points] (CO3): Suppose a new semiconductor material (called "X") was discovered that could potentially have a major breakthrough in the electronics industry by replacing Si. Given that the density of states related effective masses of electrons and holes in X are approximately 1.15me and 0.85me, respectively, and the electron and hole drift mobilities at room temperature are 3500 and 600 cm² V¹s¹, respectively, calculate the intrinsic concentration and intrinsic resistivity of X. Please note the free electron mass of X (me) is: 10.5 x 10-3¹ kg and the bandgap energy of X (Eg) is: 1.00 eV. Constants: Boltzmann constant k = 1.38×10-23 J/K OR 8.61×10¹5 eV/K Electron charge e = -1.6×10-¹9 C Free electron mass m = 9.1×10-³¹ kg Plank's constant h = 6.6x10-34 J.s Reduced Planck's constant: h = h/(27) = 1.0545x10-34 J.s Proton mass M = 1.67x10-27 kg Speed of light c = 3×108 m/s 1J = 6.241509x10¹8 ev Question 1 [30 points] (CO3): Suppose a new semiconductor material (called "X") was discovered that could potentially have a major breakthrough in the electronics industry by replacing Si. Given that the density of states related effective masses of electrons and holes in X are approximately 1.15me and 0.85me, respectively, and the electron and hole drift mobilities at room temperature are 3500 and 600 cm² V¹s¹, respectively, calculate the intrinsic concentration and intrinsic resistivity of X. Please note the free electron mass of X (me) is: 10.5 x 10-3¹ kg and the bandgap energy of X (Eg) is: 1.00 eV.