Cox = (Eo*Eox)/Tox, Eo =8.854x10 -14 F/cm, Eox = 3.9 hmmCox = 8.42209 1) A 0.18m CMOS

Cox = (Eo*Eox)/Tox, Eo =8.854x10^-14 F/cm, Eox = 3.9

hmmCox = 8.42209

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1) A 0.18μm CMOS process has the following transistor characteristics: NMOS tox = 4.1x10 m, VTNO = 0.35V, Hno = 327 cm²/V-s PMOS tox = 4.1x109 m, VTPO = -0.41V, Hp0 = 128 cm²/V-s (a) Plot the IDS vs. VDS curves for NMOS (W=0.3μm, L=0.18μm), VGS=0, 0.9V, and 1.8V PMOS (W=0.3μm, L=0.18μm), VGS=0, -0.9V, and -1.8V ◄ + -1.8V -01.35V -0.9V -0.45V los 0.45V 0.9V 01.35V 1.8V Vos 1) A 0.18μm CMOS process has the following transistor characteristics: NMOS tox = 4.1x10 m, VTNO = 0.35V, Hno = 327 cm²/V-s PMOS tox = 4.1x109 m, VTPO = -0.41V, Hp0 = 128 cm²/V-s (a) Plot the IDS vs. VDS curves for NMOS (W=0.3μm, L=0.18μm), VGS=0, 0.9V, and 1.8V PMOS (W=0.3μm, L=0.18μm), VGS=0, -0.9V, and -1.8V ◄ + -1.8V -01.35V -0.9V -0.45V los 0.45V 0.9V 01.35V 1.8V Vos

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