Design a power amplifier using a Nitronex NPT$25100$ GaN HEMT transistor, with an output power of $10$ W at $2\mathrm{.}3$ GHz$.$ The scattering parameters of the transistor, for Vds $=28$ V and Id $=600$ mA$,$ are given as follows: S$11=0\mathrm{.}593178,$ S$12=0\mathrm{.}009-127,$ S$21=1\mathrm{.}77-106,$ and S$22=0\mathrm{.}958175.$ The optimum large$-$signal source and load impedances are Zs $=10-$j$3$ and ZL $=2\mathrm{.}5-$j$2\mathrm{.}3.$ For an output power of $10$ W$,$ the power gain is $16\mathrm{.}4$ dB and the drain efficiency is $26\%.$ Design input and output impedance matching sections for the transistor, and find the required input power, the required DC drain current, and the power added efficiency.