Question: Draw a complete step-by-step CMOS process flow with a p-type substrate. Also draw a layout mask for each lithography step, showing a NMOSFET, a PMOSFET,

Draw a complete step-by-step CMOS process flow with a p-type substrate. Also draw a layout mask for each lithography step, showing a NMOSFET, a PMOSFET, and an undoped polysilicon resistor. The size of both MOS transistors is W=25e-6m, L=0.25e-6m, and the length of source/drain regions are Ls=0.5e-6m. The resistor value is R=35k ohms. The sheet resistance of the polysilicon layer for the resistors is 1k ohms/square, and the strip width for resistors is set at 0.5e-6m. Try to minimize the chip area without causing isolation problems between devices. You dont need to worry about layout design rules right now.

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