Enhancement-mode NMOS and PMOS devices both have parameters L = 4 m and tox = 500 A

Enhancement-mode NMOS and PMOS devices both have parameters L = 4 μm and tox = 500 A ̊ . For the NMOS transistor, VT N = +0.6 V, μn = 675 cm2 /V–s, and the channel width is Wn ; for the PMOS transistor, VT P = −0.6 V, μp = 375 cm2 /V–s, and the channel width is Wp. Design the widths of the two transistors such that they are electrically equivalent and the drain current in the PMOS transistor is ID = 0.8 mA when it is biased in the saturation region at VSG = 5 V. What are the values of Kn , Kp, Wn , and Wp?