Question: Exercise 1 2 . 5 ( Pozar - 4 th Edition ) - Modified: The scattering parameters of a GaN HEMT device are given at

Exercise 12.5(Pozar-4 th Edition)-Modified: The scattering parameters of a GaN HEMT device are given at four frequencies below. Use the test to determine the stability of this transistor at each frequency
Exercise 1 2 . 5 ( Pozar - 4 th Edition ) -

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