Question: For problems 1-3, use the following diffusion data: 1.) n-type Si (at a concentration of 51015cm3 ) is to be doped with a donor molecule

For problems 1-3, use the following diffusion data: 1.) n-type Si (at a concentration of 51015cm3 ) is to be doped with a donor molecule (B, Ga, In) at 1000C from a constant source. The concentration in the gas-phase is set such that the surface concentration is maintained at 21019cm3. a.) After 3 hours, what is the p-n junction depth, in nm ? Repeat for all three. b.) What is the total dosage, QT, in atoms /cm2 for Ga at this time? (Ans. 1014 ) c.) For Ga, how long will it take for the junction to become 1m deep and what is the corresponding dosage? (Ans.
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