For the following problems, assume: The cross-sectional area is 250 m x 250 m. ...

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For the following problems, assume: • The cross-sectional area is 250 µm x 250 µm. • The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 4. Consider a Si p-n junction with NA = 1018 cm3 and Np = 1017 cm3. The length of the n-region is 200 um, and the length of the p- region is 20 um. What are: a. The breakdown voltage considering only avalanche breakdown? b. The breakdown voltage considering only punch-through on the n-side? c. The breakdown voltage considering only punch-through on the p-side? d. The overall breakdown voltage? For the following problems, assume: • The cross-sectional area is 250 µm x 250 µm. • The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 4. Consider a Si p-n junction with NA = 1018 cm3 and Np = 1017 cm3. The length of the n-region is 200 um, and the length of the p- region is 20 um. What are: a. The breakdown voltage considering only avalanche breakdown? b. The breakdown voltage considering only punch-through on the n-side? c. The breakdown voltage considering only punch-through on the p-side? d. The overall breakdown voltage?