For the following short-answer problems, you need to read section 13.9 Atomic Layer Deposition" and the notes provided on CVD and ALD. a. The growth rate of ALD process as a function of temperature is U shaped; increased growth rate at both ends and temperature independent at the center. Within the letter "U", which region falls in the ALD process window? b. Does ALD process have an ability to coat in a high aspect ratio features such as those in silicon devices? c. Mention one disadvantage (technical, not economic) of ALD over CVD. d. What is the byproduct in an ALD growth of Al2O3 using precursors trimethylaluminum [Al(CH3)3] and H20? e. How can you improve the process for low reactivity precursors where increasing the temperature is not helpful? f. Explain why ALD can provide better coating at extreme geometrical surfaces compared to CVD. For the following short-answer problems, you need to read section 13.9 Atomic Layer Deposition" and the notes provided on CVD and ALD. a. The growth rate of ALD process as a function of temperature is U shaped; increased growth rate at both ends and temperature independent at the center. Within the letter "U", which region falls in the ALD process window? b. Does ALD process have an ability to coat in a high aspect ratio features such as those in silicon devices? c. Mention one disadvantage (technical, not economic) of ALD over CVD. d. What is the byproduct in an ALD growth of Al2O3 using precursors trimethylaluminum [Al(CH3)3] and H20? e. How can you improve the process for low reactivity precursors where increasing the temperature is not helpful? f. Explain why ALD can provide better coating at extreme geometrical surfaces compared to CVD