Question: GaAs, at T = 3 0 0 K , is uniformly doped with acceptor impurity atoms to a concentration of N = 2 1 0

GaAs, at T =300 K, is uniformly doped with acceptor impurity atoms to a concentration of N=210 cm^3. Assume an excess carrier lifetime of 510 s.(a) Determine the electronhole recombination rate if the excess electron concentration is n=510^4 cm^3.(b) Using the results of part (a), what is the lifetime of holes?

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