During the P-type time, silicon light was continuously introduced into the acceptor, and the concentration reached a steady-state of 10^16 cm^ -3, and the temperature was 300 silicon K. With all this silicon inside, excess carrier generation is occurring at a rate of 8 x 10^20 cm^ 3 s - 1 which is sufficiently uniformly long at the point. There is no electric field inside silicon.
(a) If the incoming light suddenly disappears at time t = 0 s, find the excess carrier concentration that changes according to t ( 0 =(b) When the incoming light starts to decrease linearly from time t = 0 s and disappears completely at t = 8 x 10 ^- 7 S, the excess carrier concentration that changes with t ( 0 =Also, draw the graph form of the two functions obtained in ( a ) and ( b ) and compare them.

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Excess Carrier Concentration in Silicon This scenario describes a situation where excess carriers are being generated in silicon due to light exposure ... View the full answer