Question: Generate the concentration vs. depth and vacancy vs. depth curves for an Arsenic Implantation on a Silicon target of 3500 with an energy of 100

Generate the concentration vs. depth and vacancy vs. depth curves for an Arsenic Implantation on a Silicon target of 3500 with an energy of 100 keV and dose of 1x10¹³[ions/cm²] with or without 30 nm SiO₂ layer on the Si surface.

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