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Summary

Recent advancements in fabrication processes have enabled the development of solid$-$state devices with critical dimensions as small as $10$ nm $.$ This progress supports the creation of high$-$speed MEMS$/$NEMS devices to enhance integrated circuit performance. This study focuses on the scalability of a relaxation oscillator based on solid$-$liquid phase transitions in silicon $($Si$)$ micro$-/$nanowires$.$

Methodology:

Using COMSOL Multiphysics and SPICE simulations, the phase$-$change oscillations in Si wires were modeled to explore the impact of scaling device length, capacitance, load resistance, and supply voltage. The phase transition is characterized by latent heat absorption and drastic changes in electrical and thermal properties. Experiments were conducted on single$-$crystal Si wires $(500nm700nm55nm),$ achieving oscillations at reduced supply voltage $(6$ V $)$ and peak power, with frequencies ranging from $3\mathrm{.}89$ MHz to $8$ MHz $.$

Key Findings:

Phase$-$Change Mechanism: A load resistor and capacitor, connected in parallel with a Si wire, enable cyclic melting and solidification, driven by joule heating and capacitor discharge.

Scaling Effects: Smaller Si wires achieved higher frequencies $(8MHz)$ at lower power levels, demonstrating enhanced scalability. However, extreme miniaturization introduces challenges like electrical breakdown and contact resistance.

Applications: Scalable oscillators can enable GHz$-$range operation, suitable for frequency modulation in wireless communication and integration with CMOS for low$-$cost sensor networks. These devices are resilient in harsh environments, unlike conventional CMOS oscillators.

Challenges and Recommendations:

Current devices face reliability issues, often failing due to electromigration of liquid Si after $1000$ cycles. Optimizing device geometry and passivation could enhance durability, making phase$-$change oscillators a promising option for future technologies.