A hypothetical semiconductor has an intrinsic carrier concentration of 1.0 101%cm at 300 K, it...

 

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A hypothetical semiconductor has an intrinsic carrier concentration of 1.0 × 101%cm³ at 300 K, it has conduction and valence band effective densities of states N. and N, both equal to 101/cm³. 3 (a) What is the band gap E,? (b) If the semiconductor is doped with Na = 1 × 1016 donors/cm', what are the equilibrium electron and hole concentrations at 300 K? (c) If the same piece of semiconductor, already having N4 = 1 × 1016 donors/cm³, is also doped with N. = 2 × 1016 acceptors/cm³, what are the new equilibrium electron and hole concentrations at 300 K? (d) Consistent with your answer to part (c), what is the Fermi level position with respect to the intrinsic Fermi level, EF – E? A hypothetical semiconductor has an intrinsic carrier concentration of 1.0 × 101%cm³ at 300 K, it has conduction and valence band effective densities of states N. and N, both equal to 101/cm³. 3 (a) What is the band gap E,? (b) If the semiconductor is doped with Na = 1 × 1016 donors/cm', what are the equilibrium electron and hole concentrations at 300 K? (c) If the same piece of semiconductor, already having N4 = 1 × 1016 donors/cm³, is also doped with N. = 2 × 1016 acceptors/cm³, what are the new equilibrium electron and hole concentrations at 300 K? (d) Consistent with your answer to part (c), what is the Fermi level position with respect to the intrinsic Fermi level, EF – E?