Question: I need the answer as soon as possible atoms with Concentration of Silicon e to Fully ionized *100 cm3 added gallium arsenide Gats at To
I need the answer as soon as possible 
atoms with Concentration of Silicon e to Fully ionized *100 cm3 added gallium arsenide Gats at To Yook Assume that Silicon atoms act as dopant atoms and to create holes. Use the following parameters for T=3ook , Ne = 4.7*107 cm and aresnic Gaas Nuo 741018 cm's, the bandgap is Eg=142ev the temperature range. over and is constant the donor Concentration is the acceptor Concentration is ] the resulting Semiconductor would be 2 Concentration is 1 the intrinsic V the hole Concentration is the electron Concentration Assume the ionization energy for donors is 0.0058 ev total electron that are still states is vil the fraction of in the donor
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