Question: If a PN junction is forward-biased by a voltage V, then which of the following is true? Select one: a. The number of electrons on
If a PN junction is forward-biased by a voltage V, then which of the following is true? Select one: a. The number of electrons on the N side of the junction is multiplied by the exponential of V divided by the thermal voltage, kT/q b. The potential barrier is increased by V c. The difference between the quasi-Fermi levels for holes and electrons is equal to Efp - Efn, which is equal to V d. None of these e. The number of holes on the P side of the junction is multiplied by the exponential of V divided by the thermal voltage, kT/
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